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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ601 2SJ601-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES * Low on-state resistance: RDS(on)1 = 31 m MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 46 m MAX. (VGS = -4.0 V, ID = -18 A) * Low input capacitance: Ciss = 3300 pF TYP. (VDS = -10 V, VGS = 0 V) * Built-in gate protection diode * TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 (TO-251) -60 m20 m36 m120 65 1.0 150 -55 to +150 -35 123 V V A A W W C C A mJ (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14646EJ4V0DS00 (4th edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2000, 2001 2SJ601 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -18 A VGS = -10 V, ID = -18 A VGS = -4.0 V, ID = -18 A VDS = -10 V VGS = 0 V f = 1 MHz ID = -18 A VGS = -10 V VDD = -30 V RG = 0 VDD = -48 V VGS = -10 V ID = -36 A IF = 36 A, VGS = 0 V IF = 36 A, VGS = 0 V di/dt = 100 A/s MIN. TYP. MAX. -10 UNIT A A V S m10 -1.5 15 -2.0 30 25 32 3300 580 230 11 12 80 53 63 10 16 1.0 52 108 31 46 -2.5 Drain to Source On-state Resistance m m pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD 50 L VDD PG. BVDSS VDS VGS(-) 0 Starting Tch = 1 s Duty Cycle 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(-) 90% 10% 10% 90% VGS(-) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA PG. 50 RL VDD 2 Data Sheet D14646EJ4V0DS 2SJ601 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 dT - Percentage of Rated Power - % 100 80 60 40 20 0 PT - Total Power Dissipation - W 80 60 40 20 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -1000 PW ID - Drain Current - A -100 S( o n) ID(pulse) 10 =1 Lim ite d ID(DC) P o 10 DC Lim wer ite Dis d sip ati o 1m ms n 0 s 0 s s -10 RD -1 TC = 25C Single Pulse -1 -10 -100 -0.1 -0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(j-A) = 125C/W 10 Rth(j-C) = 1.92C/W 1 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14646EJ4V0DS 3 2SJ601 FORWARD TRANSFER CHARACTERISTICS -1000 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -120 -100 VGS = -10 V ID - Drain Current - A ID - Drain Current - A -100 -80 -4.5 V -60 -4.0 V -40 -20 0 0 -1 -2 -3 -4 Pulsed -5 VDS - Drain to Source Voltage - V -10 TA = -55C 25C 75C 125C VDS = -10 V Pulsed -5 -4 -1 -0.1 -1 -2 -3 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 50 40 30 20 10 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V ID = -36 A -18 A -7 A Pulsed 100 10 1 TA = 125C 75C 25C -55C 0.1 VDS = -10 V Pulsed 0.01 -0.01 -0.1 -1 -10 -100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -4 VDS = -10 V ID = -1 mA 60 50 40 30 20 10 0 -1 -10 -100 VGS = -4.0 V -4.5 V -10 V Pulsed -3 -2 -1 -1000 0 -50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C 4 Data Sheet D14646EJ4V0DS 2SJ601 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 50 40 30 20 10 0 -50 ID = - 18 A 150 -10 V -1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed Pulsed -4.5 V VGS = -4.0 V ISD - Diode Forward Current - A -100 VGS = -10 V -10 -4 V 0V 1 0 50 100 0.1 0 -0.5 -1.0 -1.5 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 1000 VDD = -30 V VGS = -10 V RG = 0 td(off) 100 tf td(on) 10 tr VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 Crss 10 -0.1 -1 -10 -100 1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -60 -50 -40 -30 -20 -10 VDS 0 0 0 10 20 30 40 50 60 70 QG - Gate Charge - nC VDD = -48 V -30 V -12 V ID = -36 A VGS -12 -10 -8 -6 -4 -2 VGS - Gate to Source Voltage - V 100 10 1 -0.1 -1 -10 -100 IF - Drain Current - A Data Sheet D14646EJ4V0DS 5 2SJ601 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Current - A SINGLE AVALANCHE ENERGY DERATING FACTOR 160 VDD = -30 V RG = 25 VGS = -20 0 V IAS -35 A IAS = -35 A EAS Energy Derating Factor - % 140 = 12 3m 120 100 80 60 40 20 10 J 1 VDD = -30 V RG = 25 VGS = -20 0 V 100 1m 10 m L - Inductive Load - H 0.1 10 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D14646EJ4V0DS 2SJ601 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1.5 -0.1 +0.2 5.0 0.2 1.6 0.2 0.5 0.1 0.8 4.3 MAX. 4 5.5 0.2 13.7 MIN. 6.5 0.2 5.0 0.2 4 1.5 -0.1 +0.2 6.5 0.2 2.3 0.2 2.3 0.2 0.5 0.1 1 2 3 7.0 MIN. 1 2 3 1.1 0.2 +0.2 0.5 -0.1 2.3 2.3 0.75 0.5 -0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) +0.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 0.7 1.1 0.2 2.0 MIN. 5.5 0.2 10.0 MAX. 1.0 MIN. 1.8TYP. Data Sheet D14646EJ4V0DS 7 2SJ601 * The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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